The influence of band gap gradients on the charge collection and diode quality factor of solar cells is investigated by device simulation. A back surface band gap gradient manifested as a gradient of the conduction band is found to lead to an increased diode quality factor. Thus, the positive influence of the gradient on the fill factor is partially counterbalanced by the diode quality factor increase. The reason for the latter is the enhanced contribution of space charge region recombination. If the cell is equipped with a double gradient at front and back surfaces, the detrimental diode factor increase can be suppressed. The relevance of the findings is investigated using different carrier lifetimes and doping levels.